Electron Beam Lithography Systems

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Enables 100 times higher throughput for sub-micron fabrications which laser writer cannot do.
The ELS-HS50 contribute to the high-value-added devices like IOT devices which requires high-mix low-volume production.

[Applications]
- Direct writing process from sub-micron to nano meter size (semiconductor laser (DFB), communications (WDM, Silicon photonics), High frequency devices (HEMT), hologram, bio-chip, ASIC, SoC, MEMS sensor devices, power devices)
- Wafer size of nanoimprint mold
- Nanotechnology research and development

Key Product Features

High Throughput Lithography System

image- Newly designed column enables higher electron beam up to 1 µA
- Two 6inch wafers/hour of high throughput
- 10nm diameter of electron beam at 100nA high beam current

Specification

Emitter ZrO/W thermal field emitter
Acceleration Voltage 50 kV, 20 kV
Beam Diameter 2.8 nm diameter (@50 kV, 1nA)
Minimum line width 20 nm (@50 kV, 2nA)
Beam Current 1 nA to  1 µA
Field Size Max. 3,000 µm x 3,000 µm
Min. 100 µm x 100 µm
Beam Positioning Max. 1,000,000 x 1,000,000 (20bit DAC)
Beam Positioning Resolution 0.1 nm
Maximum Specimen Size 8" wafer or 7" square mask
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