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Acceleration Voltage 150 kV
Line & Space pattern with 50 nm
pitch and 3 nm line width
Elbow pattern with 12 nm pitch
Vertical, horizontal, diagonal, and ring patterns of 8 nm line
Bow-Tie pattern with 2.5 nm gap
Acceleration Voltage 125 kV
Line & Space pattern with 60 nm
pitch and 4 nm line
Blazed pattern with a pitch of
600 nm
SAW device pattern with 300 nm pitch
Triangle pattern of 50 nm per
side
Acceleration Voltage 100 kV
Line & Space pattern with 50 nm
pitch and 3 nm line
Line & Space patterns with 60 nm pitch
Square patterns with a pitch of 400 nm
Ring pattern with 50 nm line
Acceleration Voltage 50 kV
400 nm pitch Line & Space patterns on the entire surface of 4 inch wafer fabricated for 18 h
Concentric circle patterns with line
widths 100-450 nm
Patterns imitating scales of
morpho butterflies
Rectangular pattern with
150 nm line
EIS-200ERP
Line & Space pattern with 200 nm pitch and 450 nm depth
Inclined dot pattern with Φ300 nm and 300 nm depth
Holographic pattern up to max. 1050 nm depth
Pillar pattern with Φ35 nm and 100 nm pitch
EIS-220P or EIS-200ERP + Deposition option
Lift-off pattern of straight lines with 50 nm width and 100 nm height
Lift-off pattern of curved lines with 50 nm width and 100 nm height
Lift-off pattern with 100 nm line width and 100 nm height
Mushroom shape fabricated by T-gate process and lift-off process
EIS-1500
45° tilted etching pattern with 450 nm pitch Line & Space
Line & Space pattern of 400 nm pitch etched with Ar ions on Pt
Line & Space pattern of 400 nm Pitch etched with Ar ions on Si
