Electron Beam Lithography Systems


World's first 125 kV lithography system
The ELS-F125 provides the power to pattern lines down to 5 nm and the throughput to keep up with the pace of pioneering research.
It is proof of Elionix’s extensive development history and unique approach toward electron beam lithography.

Key Product Features

Top Class Writing Capability

- 5 nm linewidth guaranteed at 125 kV

- 1.7 nm beam diameter & minimum proximity effect at 125 kV
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    4 nm lines at 35 nm pitch

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    15 nm Rings

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    5 nm fine-pitch lines

High Throughput and Uniformity

- Superior large field writing:
   Uniform 10 nm lines in entire 500um field

- Small beam diameter even at high beam current; high throughput without compromising on resolution;
   2 nm beam diameter at 1 nA

User-friendly Interface

CAD and SEM interfaces on Windows:
- Easy pattern design function
- Easy control of beam condition
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    CAD Interface

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    SEM Interface

Application Gallery

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    50 nm triangles

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    50 nm squares

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    SAW filter pattern (2 µm thickness)


Emitter ZrO/W  thermal field emitter
Acceleration Voltage 125 kV, 75 kV, 25 kV
Minimum Beam Diameter Φ 1.7 nm (@ 125 kV)
Minimum Line Width 5 nm or less (@125 kV)
Beam Current 5 pA to 100 nA
Field Size Max. 3,000 µm x 3,000 µm
Min. 100 µm x 100 µm
Beam Positioning Max. 1,000,000 x 1,000,000 (20bit DAC)
Beam Positioning Resolution Min. 0.1 nm
Maximum Specimen Size 8" wafer or 7" square mask