ECR Ion Beam Etching System EIS-200ERP
New
Nano fabrication System
Compact but High Performance
The compact size of 1050 × 650 × 1260 mm allows installations in a variety of environments. The Accelerated ion beam in a vacuum enables anisotropic etching with less undercuts or sidecuts in submicron range.
Inert and Active Gases Availability
In addition to inert gases such as Ar and Xe, active gases such as O₂ and CF4 can be used as ion sources, enabling reactive etching.
High Expandability
EIS-220ERP can be used as sputter deposition machine with an optional upgrade. Long-throw sputtering can be used to deposit materials in a highly linear manner.
| Ion Source | Electron cyclotron resonance (ECR) type | ||||
|---|---|---|---|---|---|
| Ionization Gas | Ar, Xe, Inert ion gas N2, O2, CF4, Active ion gas | ||||
| Acceleration Voltage | 100V to 3000V continuously variable | ||||
| Ion Flow Density | Ar: ≧ 1.5mA/cm2 (at 2kV） O2: ≧ 2.0 mA/cm2 (at 2kV） | ||||
| Beam Diameter | Ø 20 mm（FWHM 35mm） | ||||
| Ion Flow Stability | ± 5 ％ / 2 H | ||||
| Sample Size | Max. Ø 4 inch | ||||
Sales Headquarters (Hachioji City, Tokyo)
Hours: Monday-Friday 8:30-17:30
Except Weekends, National Holidays, and Year-end and New Year Holidays