ECR Ion Beam Etching System EIS-1500
New
Nano fabrication System
Optimization for Nanofabrication
The ECR-type plasma, which is produced under low gas pressure environment, enables a high linear beam. After a high amount of low energy ions are accelerated, the etching is conducted in a higher vacuum. This system is most suited for nanometer scale etching processes.
Automation and Simplification
Comfortable operation environment, which includes automatic schedule and recipe functions, is provided to reduce manual operator workload.
Low Damage Etching
In addition to appropriate plasma striking and beam acceleration voltage settings, using the real-time monitoring function for in-plane beam distribution enables to minimize the damages on resist. This allows to provide etching options with high selectivity.
| Ion Source | Electron cyclotron resonance (ECR) type | ||||
|---|---|---|---|---|---|
| Ionization Gas | Ar, Xe, Inert ion gas N2, O2, CF4, Active ion gas | ||||
| Acceleration Voltage | 300V to 2000V continuously variable (High acceleration electrode unit specifications) | ||||
| Ion Flow Density | Ar: 0.16 ~ 0.20 mA/cm2 or more (700V） | ||||
| Beam Diameter | Ø 108 mm | ||||
| Gas Inlet Mechanism | Automatic flow control Max. 6 systems | ||||
| Sample Size | Max. Ø 6 inch | ||||
Sales Headquarters (Hachioji City, Tokyo)
Overseas
Japan: Hokkaido, Tohoku and Kanto regions, Niigata, Nagano, Yamanashi, Shizuoka, Aichi and Okinawa Prefectures
Hours: Monday-Friday 8:30-17:30
Except Weekends, National Holidays, and Year-end and New Year Holidays