ECR Ion Beam System
EIS-220P
ECR Ion Beam Sputtering System
EIS-220P
- New Products
- Microfabrication equipment
Film Deposition and Etching System Using ECR Ion Beams
Key Features
Equipped with two ion beams
By using the two ion beams for etching and film deposition, respectively, it is possible to alternate between etching and film deposition while maintaining a vacuum, without removing the sample from the chamber.
Adjustment of Ion Beam Incidence Angle
By adjusting the angle of the sample stage, the incidence angle of the ion beam relative to the sample can be changed, enabling oblique etching controlled to the desired angle.
Inert gases and reactive gases can be used
In addition to inert gases such as Ar and Xe, reactive gases such as O₂ and CF₄ can also be used as ion sources, making reactive etching possible.
Key Specifications
| Ion Gun | ECR-Type Ion Gun |
|---|---|
| Ionization gases | Ar, N₂, O₂, CF₄, etc. *Please consult us regarding CF-based gases |
| Acceleration voltage | 20 V to 3000 V |
| Beam current density | Ar: 1.5 mA/cm² or higher (at 2 kV acceleration) |
| Effective beam diameter | Φ20 mm (FWHM 35 mm) *At maximum |
| Maximum Sample Size | Main Stage: Φ4 inches Sub Stage: Φ3 inches |
| Sample Stage | Main Stage: Single-axis rotating and tilting stage (with water-cooling system) Sub-stage: Rotating stage (with water-cooling system) |
| Ultimate vacuum | 4×10⁻⁴ Pa or less |
| Operating vacuum range | 6×10⁻³ Pa～2×10⁻² Pa |
| Exhaust system | Turbo Molecular Pump Dry Pump |
| Recommended installation space |
W 3000 mm×D 2000 mm×H 1500 mm |
Applications
EIS-220P
A straight lift-off pattern with a line width of 50 nm and a height of 100 nm
Curved lift-off pattern with a line width of 50 nm and a height of 100 nm
Lift-off pattern with a line width of 100 nm and a height of 100 nm
Mushroom-shaped structures fabricated using the T-gate process and the lift-off process
