ECR Ion Beam System
EIS-1500
ECR Ion Beam Etching System
EIS-1500
- New Products
- Microfabrication equipment
Anisotropic Dry Etching System Using an ECR Ion Source
Key Features
Ideal for Microfabrication
Since ECR plasma is generated under low gas pressure, it produces a highly directional beam. It accelerates a large volume of low-energy ions and directs them into a high-vacuum sample chamber for processing. This system is best suited for nano-scale etching.
Simplified and Automated PC-Based Operation
We provide a user-friendly operating environment, including automatic scheduling and recipe functions, to reduce the operator’s workload.
Low-Damage Etching
By utilizing beam in-plane distribution monitoring capabilities in addition to plasma generation settings and beam acceleration voltage settings, damage to the resist is minimized, resulting in processing conditions with a high selectivity ratio.
Key Specifications
| Ion Gun | ECR-Type Ion Gun |
|---|---|
| Ionization gases | Ar, N₂, O₂, CF₄, etc. *Please consult us regarding CF-based gases |
| Acceleration voltage | 300 V to 2000 V |
| Beam current density | Ar: 0.15 to 0.2 mA/cm² or higher (at 700 V acceleration) |
| Effective beam diameter | Φ108 mm *Maximum |
| Maximum Sample Size | Φ6 inches |
| Sample Stage Main Stage | Single-Axis Rotating and Tilting Stage (with Water-Cooling System) |
| Ultimate Vacuum Level | Less than 3×10⁻⁴ Pa |
| Operating vacuum range | 6×10⁻³ Pa～2×10⁻² Pa |
| Exhaust system | Turbo Molecular Pump Dry Pump |
| Recommended installation space |
W 5000 mm×D 3500 mm×H 2000 mm |
Applications
EIS-1500
Pitch 450 nmLine&Space 45°-tilt etching pattern
400 nm line-and-space pattern etched from Pt using Ar ions
400-nm-pitch line-and-space pattern etched from Si using Ar ions
