ECR Ion-Beam Etching/Sputtering System EIS-220P
New
Nano fabrication System
※In addition to the main body and rack, a PC, monitor, and work desk are included.
Equipped with two Ion Guns
By using two ion guns separately for etching and deposition, it is possible to alternately carry out etching and deposition while maintaining the vacuum state without removing the sample from the chamber. [※carry out = process, execute, perform, etc.]
Ion-Beam irradiation angle adjustment
By adjusting the angle of the sample stage, the ion beam irradiation angle to the sample can be changed, enabling oblique etching controlled to the desired angle.
Inert gas and active gas can be used
In addition to inert gases such as Ar and Xe, active gases such as O₂ and CF4 can also be used as ion sources, making reactive etching possible.
| Ion Source | Electron cyclotron resonance (ECR) type | ||||
|---|---|---|---|---|---|
| Ionization Gas | Ar, Xe, Inert ion gas N2, O2, CF4, Active ion gas | ||||
| Acceleration Voltage | 100V to 3000V continuously variable | ||||
| Ion Flow Density | Ar: ≧ 1.5 mA/cm2 (at 2kV） O2: ≧ 2.0 mA/cm2 (at 2kV） | ||||
| Beam Diameter | Φ 20 mm (FWHM 35 mm) | ||||
| Ion Flow Stability | ±5 ％ / 2 H | ||||
| Sample Size | Max. Φ 4 inch | ||||
