Electron Beam Lithography Systems

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World's highest acceleration voltage 150kV lithography system
The ELS-F150 is the world's first 150kV Electron beam lithography system having 150kV of acceleration voltage. Which enables single nano order of nanofabrication for the advanced researhes and is upgraded from the ELS-F125 as a base system.

[Main applications]
- Quantum dots for quantum computer
- Resist evaluation like resolution and edge roughness for the EUV resist
- Master fabrication and material evaluation for the single nano order nanoimprint
- T-gate pattern fabrications on the thick resist for HEMT device
- Nano gap patterns for bionano sensors
- Fresnel Zone Plate (FZP) for X-ray grating

Key product features

Best Pattern Writing Capability and High throughput

- Line width of 4nm or less is guaranteed at 150kV
- 1.5nm beam diameter and minimum proximity effect at 150kV
- Wider process margin than 125kV and easier to fabricate advanced nano devices
- Single cassette auto loading system as a standard. Up to 6 slots mutliple cassettes auto loading system can be supported as option.
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High Throughput and Uniformity

- Superior fine line writing :
  line width 3nm, pitch 50nm using a commercially available resist
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User-friendly Interface

[CAD snd SEM interfaces on Windows]
- Easy pattern design function
- Easy control of beam condition
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    CAD Interface

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    SEM Interface (GUI)

Specification

Emitter ZrO/W  thermal field emitter
Acceleration Voltage 150 kV, 100 kV, 50 kV
Minimum Beam Diameter 1.5 nm diameter (@150 kV)
Minimum Line Width 4 nm or less (@150 kV)
Beam Current 5 pA to 100 nA
Field Size Max. 1,500 µm x 1,500 µm
Min. 100 µm x 100 µm
Beam Positioning Max. 1,000,000 x 1,000,000 (20bit DAC)
Beam Positioning Resolution Min. 0.1 nm
Maximum Specimen Size 8" wafer or 8" square mask
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