Electron Beam Lithography Systems

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World's highest acceleration voltage electron beam lithography system
The ELS-F150 is the world's first 150 kV electron beam lithography system. Expanding upon the ELS-F125 base system, the ELS-F150 enables single digit nanoscale device fabrication for advanced research.

Main Applications:
- Quantum dots for quantum computing
- Resolution and edge roughness testing for EUV resist evaluation

- < 10 nm master fabrication and material evaluation for nanoimprint lithography
- T-gate pattern on thick resist for HEMT devices
- Nano gap patterning for bionano sensors
- Fresnel Zone Plate (FZP) for X-ray gratings

Key Product Features

Best Pattern Writing Capability and High throughput

- 4 nm linewidth guaranteed at 150 kV
- 1.5 nm beam diameter and minimum proximity effect at 150 kV
- Wider process margin than 125 kV makes it easier to fabricate advanced nanodevices
- Single cassette auto-loader as default, supports up to 6 slot multi-cassette auto-loader (option)
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High Throughput and Uniformity

- Superior fine line writing:
3 nm line width at 50 nm pitch using commercially available resist
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User-friendly Interface

[CAD and SEM interfaces on Windows]
- Easy pattern design function
- Easy control of beam condition
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    CAD Interface

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    SEM Interface

Specification

Emitter ZrO/W  thermal field emitter
Acceleration Voltage 150 kV, 100 kV, 50 kV, 25 kV
Minimum Beam Diameter 1.5 nm diameter (@150 kV)
Minimum Line Width 4 nm or less (@150 kV)
Beam Current 5 pA to 100 nA
Field Size 3000 μm × 3000 μm (@ 25 kV)
1500 μm × 1500 μm (@ 50 kV)
1000 μm × 1000 μm (@ 100 kV)
500 μm × 500 μm
250 μm × 250 μm
100 μm × 100 μm
Beam Positioning Max. 1,000,000 x 1,000,000 (20bit DAC)
Beam Positioning Resolution Min. 0.1 nm
Maximum Specimen Size 8" wafer or 7" square mask
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