Home > ELS-F125
Ultra-High Precision Electron Beam Lithography System
ELS-F125
Nanotechnology for the Next Generation
World's First 125kV Ultra High Precision Electron Beam Lithography System
Features
High Throughput with Uniformity
Key features
- Superior large field writing :
Uniform 10nm lines in entire 600μm field - Small beam diameter at high beam current :
2nm beam diameter at 1nA
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Best Pattern Writing Capability
Key features
- Line width of 5nm or less is guaranteed at 125kV
- 1.7nm beam diameter & less proximity effect at 125kV
 4nm Lines |
 5nm Lines in fine pitch |
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 15nm Rings |
Specifications
| Emitter | ZrO/W thermal field emitter |
| Acceleration voltage | 125kV, 75kV, 25kV |
| Beam diameter | 1.7nm at 125kV |
| Minimum line width | 5nm or less at 125kV |
| Beam current | 5pA - 100nA |
| Lithography field size | 2400μm x 2400μm (Maximum) 75μm x 75μm (Minimum) |
| Maximum pixel for beam positioning | 960000 x 960000 (20bit DAC) |
| Beam positioning resolution | 0.078nm (Minimum) |
| Maximum specimen size | 6 inch wafer and 6 inch square mask (*) 8 inch is available. |
Products
- Ultra-High Precision Electron Beam Lithography System
- Electron Beam 3D Surface Roughness Analyzer
- High-Resolution SEM Sample Coating System
