Home > ELS-7500EX
TFE Electron Beam Lithography System
ELS-7500EX
Ultra-high precision lithography with a resolution of 10 nm and with high stitching and overlay accuracy.
Features
Ultra-fine lithography.
- The 2-nm diameter spot beam allows the ultra fine pattern writing of 10 nm width. ELS-7500EX incorporates SEM function which serves for exposed pattern observation.
High stitching and overlay accuracy.
- ELS-7500EX provides overlay accuracy of 30 nm that supports mix-and-match with photolithography.
- The recipe function, with saved optimum beam settings, provides the ease of the operation.
- The stage with a built-in laser interferometer and beam positioning resolution of 0.31 nm with an 18-bit DAC provide a stitching accuracy of 30 nm.
High performance with compact configuration. Ease of operation with PC control.
- Integration of a Windows compatible GUI and CAD realizes a small footprint.
- Electron optical condition control and CAD pattern design can be accomplished by simply using a mouse. A very user friendly system.
Application gallery.
Click to enlarge.
R = 100μm blazed circle (Pitch in the radius direction 1.0μm)
L&S: 80 nm
Resist Thickness: 1.5μm Line width: 25 nm
Specifications
| Electron gun emitter | ZrO/W thermal field emitter |
| Acceleration voltage | 5 to 50 kV |
| Minimum line width | 10nm |
| Specimen size | 6" (maximum) |
| Overlay accuracy | 30 nｍ |
| Field stitching accuracy | 30 nｍ |
Products
- Ultra-High Precision Electron Beam Lithography System
- Electron Beam 3D Surface Roughness Analyzer
- High-Resolution SEM Sample Coating System
