Home > ELS-7000
Ultra-High Precision Electron Beam Lithography System
ELS-7000
State-of-the-art lithography system. Patterns of 5 nm can be written with the acceleration voltage of 100 kV.
Features
World’s finest pattern writing of 5nm lines.
- With the maximum acceleration of 100 kV, the electron beam of 1.8 nm diameter provides long-hour-stability. Patterns of 5 nm can be exposed with commercially available resist.
- The compact configuration of ELS-7000 occupies only small footprint.
Acceleration voltage 100kV vs 30kV |
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 5nmLine(40nm Pitch) |
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Fine pattern lithography in large area.
- Beam positioning resolution of 0.31 nm with 18 bit DAC and the laser interferometer with a resolution of 0.6 nm provides 30nm stitching and overlay accuracy. These advantages enable fine pattern lithography in large area.
A variety of shapes are easily exposed.
- Various pattern elements are available as components to create the pattern on the Elionix-original CAD software provided as standard features.
- Circle pattern generator for writing circle and arc is available.
- Variable field size adjustment function, enabling the fabrication of WDM gratings, is available.
Application gallery.
Click to enlarge.
T-gate process with 3 resist layers
Dot pitch: 600 nm
Resist thickness: 2um
Specifications
| Electron gun emitter | ZrO/W thermal field emitter |
| Acceleration voltage | 25, 50, 75, 100kV |
| Minimum line width | 5 nm |
| Specimen size | 8" (maximum) |
| Overlay accuracy | 30 nｍ |
| Field stitching accuracy | 30 nｍ |
Products
- Ultra-High Precision EB Electron Beam Lithography System
- Electron Beam 3D Surface Roughness Analyzer
- High-Resolution SEM Sample Coating System
